Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
نویسندگان
چکیده
منابع مشابه
Photoluminescence up-conversion in InAsÕGaAs self-assembled quantum dots
We report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs. An efficient emission from the GaAs barrier is observed with resonant excitation of both the dots and the wetting layer. The intensity of the up-converted luminescence is found to increase superlinearly with the excitation density. The results suggest that the observed effect is due to a two-step tw...
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We have investigated the midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots. Resonant emissions between confined levels are clearly observed at low temperature at around 10 mm wavelength. The unipolar emissions are polarized either in the layer plane or along the z growth axis of the quantum dots. The emissions are associated with hole transitions that involve the g...
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We have succeeded in generating highly charged excitons in InAs self-assembled quantum dots by embedding the dots in a field-effect heterostructure. We discover an excitonic Coulomb blockage: over large regions of gate voltage, the exciton charge remains constant. We present here a summary of the emission properties of the charged excitons. INTRODUCTION An exciton is the elementary excitation i...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2000
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1306653